 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features * * * * * Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 2 1 3 Applications For low-noise, high-gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers. 2 3 Mechanical Data Typ: BFR193T Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: RC Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFR193TW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Marking: WRC Electrostatic sensitive device. Observe precautions for handling. 13581 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 45 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 - 65 to + 150 Unit V V V mA mW C C Maximum Thermal Resistance Parameter Junction ambient 1) 1) Test condition Symbol RthJA Value 250 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Document Number 85073 Rev. 1.3, 28-Apr-05 www.vishay.com 1 BFR193T / BFR193TW Vishay Semiconductors Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 20 V, VEB = 0 VCB = 10 V VEB = 1 V, IC = 0 IC = 1 mA IC = 50 mA, IB = 5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 50 12 0.1 100 0.5 150 Min Typ. Max 100 100 1 Unit A nA A V V DC forward current transfer ratio VCE = 8 V, IC = 30 mA www.vishay.com 2 Document Number 85073 Rev. 1.3, 28-Apr-05 BFR193T / BFR193TW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test condition VCE = 8 V, IC = 50 mA, f = 1 GHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz ZS = ZSopt,ZL=50, f = 900 MHz, VCE = 8 V, IC = 10 mA ZS = ZSopt,ZL=50, f = 2 GHz, VCE = 8 V, IC = 10 mA Power gain ZS = ZSopt,ZL=50, f = 900 MHz, VCE = 8 V, IC = 30 mA ZS = ZSopt,ZL=50, f = 2 GHz, VCE = 8 V, IC = 30 mA Transducer gain ZO=50, f = 900 MHz, VCE = 8 V, IC = 30 mA ZO=50, f = 2 GHz, VCE = 8 V, IC = 30 mA Third order intercept point at output VCE = 8 V, IC = 50 mA, f = 900 MHz Symbol fT Ccb Cce Ceb F F Gpe Gpe Min 6 0.6 Typ. 8 1.0 0.25 1.6 1.2 2.1 15 9 Max Unit GHz pF pF pF dB dB dB dB |S21e|2 |S21e|2 IP3 13 7 34 dB dB dBm Package Dimensions in mm (Inches) 1.15 (.045) 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092) 0.95 (.037) ISO Method E 3.1 (.122) 2.8 (.110) 0.4 (.016) 3 1.43 (.056) 1.20(.047) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) 1 0.95 (.037) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85073 Rev. 1.3, 28-Apr-05 www.vishay.com 3 BFR193T / BFR193TW Vishay Semiconductors Package Dimensions in mm (Inches) 0.10 (0.004) 1.00 (0.039) 0.10 (0.004) SO Method E 10 Mounting Pad Layout 2.05 (0.080) 0.39 (0.015) 0.9 (0.035) 1.25 (0.049) 2.00 (0.078) 2.0 (0.079) 0.30 (0.012) 1.3 (0.051) 0.95 (0.37) 0.95 (0.037) 96 12236 www.vishay.com 4 Document Number 85073 Rev. 1.3, 28-Apr-05 BFR193T / BFR193TW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85073 Rev. 1.3, 28-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of BFR193T05
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |